InP HBT transferred substrate amplifiers operating to 600 GHz

We report on two InP transferred-substrate (TS) HBT based terahertz monolithic integrated circuit (TMIC) amplifiers. The amplifiers use 200 nm InP HBTs and benzocyclobutene (BCB) inverted microstrip interconnect. The transferred substrate process removes the InP substrate and transfers the amplifiers to high thermal conductivity SiC substrate. The first amplifier is a nine stage common-emitter design. It has ~9 dB of small signal gain at 521 GHz. The second design is five-stage common-base amplifier. It has demonstrated gain of ~19 dB at 576 GHz. These are first reported TS InP HBT amplifiers above 200 GHz.