Mixed-mode class E-F−1 high efficiency GaN power amplifier for P-band space applications

A GaN based high efficiency, high power amplifier in P-band for space borne radar applications is demonstrated. It uses a single chip transistor that achieves 250W output power with greater than 80% drain efficiency from 420MHz to 450MHz, using a pulsed waveform with 10% duty cycle. The circuit topology is based on a combination of class E and inverse class F harmonic tuning.