Rapid non-destructive detection of sub-surface Cu in silicon-on-insulator wafers by optical second harmonic generation

Time dependent second harmonic optical signals were measured across silicon-on-insulator (SOI) wafer coupons contaminated by Cu-63 ion implanted into the buried oxide (BOX) and near the SOI/BOX and BOX/Bulk interfaces. Average signals after 1 second of exposure for all spatial points were compared between wafers and used to differentiate contamination levels post ion-implantation.