300mm wafer level sulfur monolayer doping for III–V materials

We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303 ohms/sq with 8% uniformity. Mono-layer doping was achieved via molecular doping of sulfur and conventional annealing for dopant drive-in. Chemical reactivity, cost, environmental, safety and health aspects (all of which are crucial for high volume manufacturing) were considered in the chemical down-selection. MLD demonstrates molecular-scale control with conformal, nondestructive introduction of dopants to III-V materials.