A p-channel BICFET in the InGaAs/InAlAs material system

The bipolar inversion-channel field-effect transistor (BICFET) relies on a field-effect mechanism to induce and modulate an inversion layer placed at the heterojunction interface. The device was fabricated using molecular beam epitaxy. A current gain of approximately 15 has been achieved at a current density J of approximately 8*10/sup 3/ A/cm/sup 2/ at 300 K. At 77 K, the gain rises to 40 with J=2*10/sup 4/ A/cm/sup 2/. This gain, which follows theoretical predictions, continuously increases with collector current and is limited only by the amount of heat generated in a large-area device. Because of its potential for ballistic transport in the collector, the InGaAs/InAlAs BICFET should be very attractive for high-speed applications.<
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