Effective normal field of average inversion layer for InGaAs n-channel MOSFETs

This paper describes an effective normal field dependence of the average inversion layer depth for InGaAs MOSFETs. We evaluate the average inversion layer depth calculated by the conventional model in the circuit simulator. The results are compared with the quantum effect model. Also, we evaluate the quantum effect on the drain current. It is found that the accurate modeling of the quantum effect in the inversion layer is needed in modeling of the drain current.