Unipolar switching of perpendicular mtj for STT-MRAM application

In this paper, new pMTJ that shows reliable unipolar switching, since the free layer has strong perpendicular anisotropy and well oriented perpendicular magnetization, same as in a typical pMTJ designed for STT-MRAM application, unipolar switching of pMTJ in a 1D-1MTJ architecture MRAM may be achieved for application in extreme densities . In this presentation, we will demonstrate the unipolar switching from these pMTJ devices and present our study of the physics process behind such intriguing behavior .