Analysis of multilayered CoZrNb film on-chip noise suppressor as a function of resistivity and permeability

Radio frequency integrated circuit (RF IC) is widely applied to small-size multi-function information terminal with higher data transfer rate. Because of the mixed layout of digital and analog circuits in a latest RF IC chip, the electric current-oriented magnetic noise from the digital circuit to the analog circuit will desensitize analog receiver circuit chain. A new method to use FMR losses of magnetic film was proposed and implemented for a cellular phone RF IC receiver circuit, which experimentally demonstrated good noise suppression in the LTE Band 1 (2.1 GHz range). Analysis of the noise suppressor, however, was not successful because of complicated on-chip FMR, eddy currents and magnetic field distribution associated with crossed-anisotropy multilayered Co
₈₅
Zr
₃
Nb
₁₂
film. Therefore this paper discussed not the crossed anisotropy but the uniaxially aligned multilayer of the same Co
₈₅
Zr
₃
Nb
₁₂
film (M
_s
= 1.0T, H
_k
= 1.2 kA/m, resistivity ρ=) covering on the top of MSL (microstrip line) as a model of on-chip wire by using finite element method full wave electromagnetic simulation.