Configurable Cubical Redundancy Schemes for Channel-Based 3-D DRAM Yield Improvement

Three-dimensional stacked memory stacking logic and memory dies are one of the most promising 3-D integration applications. This paper proposes two memory redundancy schemes to improve the yield of channel-based 3-D stacked DRAM by sharing spare memory across dies and satisfying channel constraints at the same time. The proposed schemes achieve much higher yield with very small area overhead than other memory redundancy schemes.