Cesium Azide—An Efficient Material for Green Light-Emitting Diodes With Giant Quantum Dots

A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN
₃
) was compared with conventional ones including CsF, Cs
₂
CO
₃
, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the low-temperature evaporated CsN
₃
provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN
₃
-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm
²
) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN
₃
-devices significantly decreased ~5.5 V in comparison with LiF-devices.A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN
₃
) was compared with conventional ones including CsF, Cs
₂
CO
₃
, LiF and without EIL in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the low-temperature evaporated CsN
₃
provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, the current efficiencies of 7.45 cd/A was achieved in the CsN
₃
-based green QLEDs consisting of giant CdSe@ZnS/ZnS quantum dots at 544 nm, which was 310% (at 10 mA/cm
²
) improvement over the LiF-based QLEDs. Moreover, the light turn-on voltage in CsN
₃
-devices significantly decreased ~5.5 V in comparison with LiF-devices.