TSV fabrication for image sensor packaging

In this paper, we report a novel TSV fabrication method to develop CMOS image sensor package. The major processes comprise cavity wall formation, glass carrier to IC wafer bonding, grinding, TSV fabrication, passivation, laser drilling to expose the Al bondpads, PVD deposition, electroplating, re-distribution layer (RDL), under bump metallization and solder bump formation. The as-formed TSV CIS structure is solid and reliable in mass production.