Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si1−xGex

In this paper, we report the effect of two Si precursors, SiH
₄
and SiCl
₂
H
₂
on the micro-loading, morphology and throughput for selective epitaxial growth of Si and Si
_1-x
Ge
_x
(0<;x<;1) on recessed or elevated source/drain junctions. We find that the pattern dependency (micro-loading), growth direction (morphology) and growth rate of selective epitaxial film of Si or Si
_1-x
Ge
_x
can be engineered by carefully adjusting the ratio of partial pressures of SiH
₄
and SiCl
₂
H
₂
.