Process-Induced Charge Damage in PETEOS for Interlevel Dielectric Applications

This paper reports on the process characterization and optimization to reduce process-induced damage by PETEOS deposition used for interlevel dielectric applications. It is shown that the deposition-etch- deposition PETEOS process utilized to fill the narrow gaps between metal spaces has a major impact on the electrical parameters. Elimination of the magnetic field and increasing the pressure in the "etch" portion of this process could significantly reduce charging.