High Frequency SiC Majority Carrier Modules

We report a TARDEC-funded module design and build process based on our thinPak that is ideally suited to the challenges majority carrier SiC power devices introduce. Our ultra-compact (2cu.in.) 1200V, 300A half bridge is based on enhancement mode 1200V JFETs fabricated by SemiSouth. However the technology and experience are also directly applicable to SiC MOSFETs. Silicon Power's technology allowed for up to (16) 2.25x4mm SiC JFETs and (8) 4x4mm SiC Schottky diodes to be packaged in parallel and used as a building block for a 1/2 bridge module. These modules exhibited turn-on and turn-off losses totaling about 10mW at 600V and 300A with fall times of only 150ns.