Monolithic Integration of GaN Transistors for Higher Efficiency and Power Density in DC-DC Converters

Power converters are constantly trending towards higher output power, higher efficiency, and higher power density. To provide improved performance better power devices are required. For silicon (Si) power devices, the gains in performance have slowed as the technology has matured and approaches its theoretical limits. Gallium nitride (GaN) devices have emerged as a possible replacement for silicon devices in various power conversion applications and as an enabler of new applications not previously possible. In this paper we will discuss the latest eGaN(r) FETs developments, including a major improvement with the latest generation of discrete devices and introduce a new family of monolithic half bridge ICs offering unmatched high frequency performance. These new families of eGaN FETs are widening the performance gap with the aging power MOSFET in high frequency power conversion by providing significant gains in key switching figures of merit, continued reductions of performance limiting in-circuit parasitics, and improved thermal performance.