Using the on-state-Vbe,sat-voltage for temperature estimation of SiC-BJTs during normal operation

Temperature measurement of power semiconductor devices in real-life application is a desired goal to implement health monitoring methods like thermal impedance spectroscopy. During on-state, the base-emitter voltage of current driven SiC bipolar transistors shows dependency on the collector current but also on the temperature. It is planned to measure the virtual junction temperature of a SiC-BJT through electric sensitive parameters during onstate.