Abstract:
Temperature measurement of power semiconductor devices in real-life application is a desired goal to implement health monitoring methods like thermal impedance spectrosco...Show MoreMetadata
Abstract:
Temperature measurement of power semiconductor devices in real-life application is a desired goal to implement health monitoring methods like thermal impedance spectroscopy. During on-state, the base-emitter voltage of current driven SiC bipolar transistors shows dependency on the collector current but also on the temperature. It is planned to measure the virtual junction temperature of a SiC-BJT through electric sensitive parameters during onstate.
Date of Conference: 19-20 May 2015
Date Added to IEEE Xplore: 06 July 2015
Print ISBN:978-3-8007-3924-0
Conference Location: Nuremberg, Germany
