Embedded Very Fast Switching Module for SiC Power MOSFETs

The development of very fast switching semiconductors based on silicon carbide (SiC) offers many opportunities. Switching speed and pulse frequency can be increased significantly and passive components can be reduced in size and cost. One requirement to make use of these benefits is to package the semiconductors in a way that reduces EMI already at its origin. The embedding technology gives the opportunity to reduce parasitic inductances significantly [1]. When the low side chip of a half bridge is attached face-down, the output capacitance is almost eliminated and DC+ and DC-capacitances against heat sink are symmetrized [2]. This paper focusses on how the module needs to be designed to meet the needs like thermal aspects and manufacturing processes.