Elements for photodetectors based on epitaxial layers In4Se3, In4Te3 and Cdsb

Photosensitive elements of semiconductor compounds In
4
Se
3
, In
4
Te
3
, CdSb and heterostructures were obtained by liquid phase epitaxy method. Laser modification of structural and phase state of epitaxial layers was conducted. The methods of SEM, AFM and STM microscopy were used for investigation of transformation processes in nanostructured regions on boundaries of hetero structures. Spectral characteristics and parameters of photosensitive elements and IR filters were studied. Interference absorptive filters for cutting off infrared range of the spectrum were formed by deposition in a vacuum on these crystals of thin films.