Disturbance Relaxation for 3D Flash Memory

Even though 3D flash memory presents a grand opportunity to huge-capacity non-volatile memory, it suffers from serious program disturbance problems. In contrast to the past efforts in error correction codes and the work in trading the space utilization for reliability, we propose a disturbance-relaxation scheme that can alleviate the negative effects caused by program disturbance inside a physical block. This scheme does not introduce any extra overheads on encoding or storing of extra redundant data. In particular, a methodology is proposed to reduce the data error rate by distributing unavoidable disturbance errors to the flash-memory space of invalid data, with the considerations of the physical organization of 3D flash memory. A series of experiments was conducted based on real multi-layer 3D flash chips, and it showed that the proposed scheme could significantly enhance the reliability of 3D flash memory.