Pulse-mode selective MOVPE method for high-quality strained InGaAsP MQW structure

Pulse-mode selective MOVPE on a narrow stripe region was investigated for achieving excellent crystal quality of InGaAsP/InGaAsP strained MQW structure. The flatness of selectively grown InGaAsP layers were drastically improved by pulse-mode epitaxy due to the enhanced migration effect. Furthermore, very narrow photoluminescence spectrum linewidth of 28 meV at 25/spl deg/C for strained MQW structure was realized. The 1.3 /spl mu/m-wavelength buried heterostructure (BH) laser diode (LD) which has a strained MOW active layer grown by the pulse-mode selective MOVPE showed the record low-operation current at a high temperature of 100/spl deg/C.