Dry etching process in InP Gunn device technology utilizing inductively coupled plasma (ICP) system

In this paper we report on recent progress in 77 GHz InP Gunn device process development. Specifically, utilizing recent advances in the dry etching of InP to define Gunn diode active layer mesas. Unlike previous FeCl/sub 3/-based photochemical etches, the inductively coupled plasma (ICP) system offers excellent sidewall anisotropy and uniformity. This provides enhanced DC and RF consistency facilitating mass manufacturing of millimeter wave Gunn oscillators.