Model of defect formation in annealed undoped and Fe-doped liquid encapsulated Czochralski InP

Infrared absorption spectroscopy measurements indicate high concentration of hydrogen indium vacancy complex V/sub In/H/sub 4/ in undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP. Annealed undoped and Fe-doped semi-insulating (SI) InP are studied by room temperature Hall effect measurement and photocurrent spectroscopy. The results show that a mid gap donor defect and some shallow intrinsic defects are formed by high temperature annealing. This mid gap defect is shown to be phosphorus antisite related. Defect formation process and compensation mechanism in annealed SI InP are discussed.