A novel ultra-low loss four inch thyristor for UHVDC

We introduce a new generation of 100 mm electrically triggered phase controlled thyristor (PCT) with on-state voltage V
_T
<; 1.6 V at I
_T
= 1.5 kA and T = 90 °C and nominal forward and reverse blocking voltages of 8.5 kV. This PCT employs a new junction termination, which allows us to reduce the original device thickness by 7 % and hereby the V
_T
by 13 %. This device has thinner p-type active regions with both the wafer and doping profiles specially shaped around the negative bevel. As a result, the reach-through effect is absent in the active area, the leakage current is reduced and the maximal junction temperature is increased by 25 °C.