Fully integrated SOI gate driver for control of 1200V IGBT switches in three-level-NPC topology

A novel gate driver for the control of 1200V IGBT switches in Three-Level Neutral Point Clamp (3L-NPC) half bridges based on high voltage silicon on insulator (SOI) technology is presented. The driver features a safety concept dedicated for 3L-NPC applications. The three dies of this multichip solution are assembled in a tiny cost effective IC package with excellent electrical and thermal properties. The measurement results demonstrate the driver performance at high voltage switching and power inverter operation. The new driver approach supports the market needs for cost efficient 3L gate driver circuits.