Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

A 2D analytical model for breakdown voltage (BV) and specific on-resistance (R
on, sp
) of GaN lateral polarization-doped super-junction (LPSJ) devices has been developed. The electric field along the critical path has been modeled and compared with 2D simulation results, followed by breakdown voltage calculation using impact ionization integral. Design space and optimization of LPSJ has been disused in terms of n/p pillar doping, thickness and aluminum composition x
Al
in grading AlGaN. The 2D analytical model represents a more realistic performance limit than the 1D model and the R
on, sp
of LPSJ with x
Al
= 0.3 shows > 10x reduction over conventional GaN junctions for BV>2 kV. It can provide useful guidelines for the development of LPSJ and the design criteria to achieve minimum Ron, sp.