High voltage thick SOI-LIGBT with high current density and latch-up immunity

A high voltage SOI-LIGBT with high current capability and latch-up immunity is proposed in this paper. The proposed SOI-LIGBT features the segmented U-shaped N
⁺
emitter and the `JFET'-region is surrounded by the U-shaped channel. The U-shaped channel significantly enhances the electron injection from the emitter to the N-drift region, which leads to an improvement on the current density. Meanwhile, the P
⁺
emitter between the adjacent U-shaped N
⁺
emitters forms an additional hole current path, which is beneficial to the latch-up immunity. The experiments demonstrate that the proposed SOI-LIGBT exhibits a high current density (J
_C
) of 240A/cm
²
at V
_CE
= 3V and V
_GE
= 5V, a low specific on-resistance (R
_on.sp
) of 1.25Ω·mm
²
with breakdown voltage (BV) of 590V. The saturation current is about 550A/cm
²
at V
_CE
= 500V without latch-up issue.