Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

A compact model for the Partially-Narrow-Mesa (PNM) IGBT is developed. The model reproduces the measured specific feature of a substantial collector current enhancement. Simulated switching characteristics are also verified to reproduce the measurement data. It is further demonstrated that a small switching-loss increase in the studied IGBT structure is overcompensated by the conduction-loss reduction, resulting in reduction of the total loss in comparison to the conventional IGBT structure.