Heterogeneously integrated waveguide-coupled photodiodes on SOI with 12 dBm output power at 40 GHz

We demonstrate InP-based modified uni-traveling carrier photodiodes on silicon-on-insulator (SOI) waveguides with an internal responsivity of 0.95 A/W and 48 GHz bandwidth. The RF output power reaches 12 dBm at 40 GHz, which is the highest reported output power of high-speed waveguide photodiodes.