Abstract:
We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ∼0.24dB/cm and ∼0.2dB, respectively....Show MoreMetadata
Abstract:
We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ∼0.24dB/cm and ∼0.2dB, respectively. We also characterized our SOI-based Ge photo-detector and silicon modulator at λ= 1310nm.
Date of Conference: 22-26 March 2015
Date Added to IEEE Xplore: 15 June 2015
Electronic ISBN:978-1-5575-2937-4
Conference Location: Los Angeles, CA, USA