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Ultra-low loss CMOS compatible multi-layer Si3N4-on-SOI platform for 1310nm wavelength | IEEE Conference Publication | IEEE Xplore

Ultra-low loss CMOS compatible multi-layer Si3N4-on-SOI platform for 1310nm wavelength


Abstract:

We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ∼0.24dB/cm and ∼0.2dB, respectively....Show More

Abstract:

We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ∼0.24dB/cm and ∼0.2dB, respectively. We also characterized our SOI-based Ge photo-detector and silicon modulator at λ= 1310nm.
Date of Conference: 22-26 March 2015
Date Added to IEEE Xplore: 15 June 2015
Electronic ISBN:978-1-5575-2937-4
Conference Location: Los Angeles, CA, USA

References

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