Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure

Intrinsic unipolar SiO
_x
-based Resistive-RAM (ReRAM) characteristics and resistive switching mechanisms have been investigated in TiW/SiO
_x
/TiW structure. The cross-bar (metal-insulator-metal) MIM structures have been examined and optimized, and SiO
_x
composition has been varied. Current transport behaviors of multilevel states, switching layer polarization, proposed defect transformations and energy band diagrams of SET and RESET processes have been modeled to provide insights for optimization to obtain high yield and auto-forming capability.