Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors

In this paper we present gating effects in double well resonant tunneling heterostructures with sub-micron minimum feature widths. Resonant tunneling through one dimensional states in the wells is observed as the device approaches pinch-off at temperatures as high as 77 K. This is the first clear demonstration of resonant tunneling through such laterally confined one-dimensional sub-bands at 77 K.