DHBT/RTD-based active frequency multiplier for wireless communications

We present, for the first time, measured data pertaining the microwave performance and characterization of a X6 (127->762 MHz) active frequency multiplier (FM), based on AIInAs/GaInAs/InP double heterostructure bipolar transistor (DHBT) and AlAs/InGaAs resonant tunneling diode (RTD) active devices. At +23/spl deg/C and a nominal input power of -3 dBm, the X6 DHBT/RTD multiplier exhibits a conversion gain of +1 dB, a power dissipation of 22 mW, a dc efficiency of 3%, and an overall 0 to 60/spl deg/C output power variation of 0.7 dB. The rich output harmonic content makes the DHBT/RTD combination a prime candidate for high-order multiplication applications.