Real space transfer noise of GaAs p-HEMTs

From the measured noise data in a GaAs p-HEMT over a 2-18 GHz frequency range, we have identified the magnitudes of the gate and drain noise sources in the 2-DEG saturation velocity region of undoped InGaAs channel. Additional gate and drain noise sources in the parallel doped AlGaAs channel contribute to the overall noise in p-HEMT. We call this additional noise the real space transfer noise.