MBE growth of near-infrared InGaAs photodetectors with carbon tetrabromide as a p-type dopant

The carbon doping of In/sub x/Ga/sub 1-x/As was systematically studied as a function of carbon tetrabromide flux and indium molar fraction. The efficiency of carbon incorporation in InGaAs lattice matched with InP was the same as GaAs and showed a maximum attainable doping level of 2/spl times/10/sup 20/Cm/sup -3/. The increase of indium molar fraction showed autocompensation and a switch of conductivity from p-to-n-type, at an In molar fraction of 80%. In/sub 0.73/Ga/sub 0.27/As photodetectors were fabricated using carbon as a dopant. The figures of merit of the p-i-n photodetectors showed parameters close to those of beryllium doped devices. CBr/sub 4/ can be used as an effective p-type doping precursor in solid-source molecular beam epitaxy in In/sub x/Ga/sub 1-x/As with indium molar fraction up to 80%.