MOCVD growth of InGaN multiple quantum well LEDs and laser diodes

The MOCVD growth of InGaN/GaN multiple quantum well (MQW) structures for blue LEDs and lasers has been investigated. (1) The structural and optical properties of the layers have been characterized by X-ray diffraction and photoluminescence. (2) By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 mA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. (3) Room temperature (RT) pulsed operation of blue (420 nm) nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates with threshold current densities as low as 19 kA/cm/sup 2/ were observed for 5/spl times/800 /spl mu/m/sup 2/ lasers with uncoated reactive ion etched (RIE) facets.