Band offsets in near-GaAs alloys

We determine the band offset ratio of GaAs/GaXAs heterostructures, where X is any alloying element (e.g. In, Al, P, Sb), by studying GaXAs/AlGaAs superlattices. Photoluminescence is measured at both ambient and high pressure from GaAs and GaXAs quantum wells and this yields the band offset ratio of the GaXAs/GaAs interface. To confirm the technique, the band offset ratio of GaAs/AlGaAs is determined in this paper using this general method, and the result agrees well with previously published data obtained more directly.