Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP

We have successfully observed radiant Er-related low-temperature photoluminescence (PL) dominated by numerous extremely sharp emission lines due to the intra-4f shell transitions of Er/sup 3+/ ions in Er-doped GaP (GaP:Er) grown by OMVPE with TBP. The intensity of the emission lines depended strongly on the growth temperature, the Er concentration and the reactor pressure, indicating coexistence of various Er-related luminescence centers in the samples. The fluorescence-detected EXAFS analysis on the samples revealed clearly that the majority of Er atoms doped are substitutionally incorporated into Ga sites in the GaP lattice. Effects of In-addition to GaP:Er have also been investigated.