Simulation of chemical beam epitaxy with triethylgallium and tris(dimethylamino) arsine

A reaction model for the epitaxial growth of GaAs by chemical beam epitaxy using triethylgallium and tris(dimethylamino) arsine is presented. The model is developed by properly combining surface decomposition mechanisms of the two metalorganic species. Computer simulations based on the model are carried out to make comparison with the experimental observations for this growth system. The model is shown to provide very good agreement with the growth kinetics observed.