A moisture-related breakdown mechanism in low-k dielectrics using a multiple I-V ramp test

A Multiple I-V Ramp Test is designed to stress low-k SiCOH-based dielectrics that have absorbed moisture. Two conduction regimes are found based on the total injected fluence into the dielectric films and the concentration of water in the dielectric. The dielectric under stress is either characterized by electron trapping, or the generation of traps and/or interface states. A mechanism for moisture-related breakdown is proposed that is consistent with results from previous works on water-diffused silicon dioxide films.