Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET

A fast two-point measurement methodology, applicable to nano-scale devices, is introduced to separate electron trapping (Not, e) from interface state contributions (Nit) in hot carrier (HC) induced ΔVt in n-type RMG SOI FinFETs. It is shown that Not, e component is comparable to or dominates over Nit for high-Vg (≥ Vd) hot carrier stress (HCS). The time power-law exponent for HC induced Not, e is larger than 0.2, indicating the observed Not, e is partly due to injection of hot carriers instead of purely parasitic PBTI effect caused by the cold carriers.