NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures

SiGe channel planar pMOSFETs have been recently shown to offer improved NBTI reliability, owing to reduced hole trapping into pre-existing oxide defects and reduced interface state generation. In this paper we report a broad set of experimental data of SiGe cladding finFETs with varying fin widths, and we show that the intrinsically superior NBTI reliability can be ported to 3D architectures of relevance for N10 and beyond. The underlying physical mechanisms are discussed and compared to planar technologies.