Monitoring test structure for plasma process induced charging damage using charge-based capacitance measurement (PID-CBCM)

We propose monitoring test structure and measurement technique for plasma process induced charging damage (PID) using charge-based capacitance measurement (CBCM). For evaluating the influence of PID on MOSFET effectively, remarkably small (several tens of fF) gate capacitance of MOSFET can be extracted by eliminating parasitic antenna capacitance. Moreover, we can extract interface trap density from the same CBCM structure using the modified Charge-Pumping measurement.