Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics

We present a comprehensive simulation framework to interpret electrical characteristics (I-V, C-V, G-V, Charge-Pumping, BTI, CVS, RVS, ∶) commonly used for material characterization and reliability analysis of gate dielectric stacks in modern semiconductor devices. By accounting for the physical processes controlling charge transport through the dielectric (e.g. carrier trapping/de-trapping at the defect sites, defect generation, etc.), which is modeled using a novel approach based of material characteristics [1], [2], the simulations provide a unique link between the electrical measurements data and specific atomic defects in the dielectric stack. Within this methodology, the software allows an accurate defect spectroscopy by cross-correlating measurements of pre-stress electrical parameters (IV, CV, BTI). These data are then used to project the stack reliability through the simulations of stress-induced leakage current (SILC) and time-dependent dielectric degradation trends, demonstrating the tool capabilities as a technology characterization/optimization benchmark.