Dry Etched Waveguide Laser Diode on GeOI

We demonstrate a top-top contact, dry etched mirror facet III-V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 × InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the GeOI platform in order to realize the monolithic integration of III-V electronic and photonic devices with silicon and SiO
₂
. Lasing occurred at ~ 985 nm with a threshold current density of ~ 2 kA/cm
²
. Pulsed measurements, and SEM and TEM characterization methods were used. The issue of heat transfer limited the performance of the laser.