A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET

A charge/capacitance model of a simple form that is continuous across the linear and saturation regimes is developed. The model is based on a conductance analysis of the MOSFET which incorporates velocity saturation at a first-principles level. By relating charge layers within the device to characteristics of the conductance, the charge model not only is able to characterize C-V behavior but to also incorporate velocity saturation. Since the basic conductance form is a hyperbola, the model is mathematically simple and robust and yields MOSFET capacitances and charges which are continuous and of infinite differentiability over the linear and saturation regimes of device operation.