Light-Emitting n-ZnO Nanotube/n+-GaAs Heterostructures Processed at Low Temperatures

In this letter, a light-emitting heterostructure is designed and manufactured using vertically aligned n-type zinc oxide nanorods (ZnO NRs) on n
⁺
-GaAs wafers. The chemically grown ZnO NRs were also converted to nanotubes (NTs) using 2 molar KCl solution and the device fabrication was repeated using them. Both types exhibited a significant visible light at a forward bias of 1 V but with different brightness. Photoluminescence ~390 nm from NRs and NTs was obtained and the current injection in these devices is explained by a tunneling phenomenon.