Low power memory design for high temperature in ruggedized electronics

Applications such as Logging-While-Drilling (LWD), automotive, and aerospace systems require electronics whose operating temperature is much higher than that of conventional consumer electronics. One of the most critical functional blocks for high temperature operation is memory due to the significantly increased leakage. This paper explains two different memories (SRAM and NEMS NVM) for high temperature operation. In the SRAM, circuit techniques for improving sensing margin under the leaky bitline condition will be discussed. In the NEM NVM, two adhesion-force-based NEM NVM devices will be introduced.