RADFET response to photon and electron beams

A comparative study of Radiation-sensitive field effect transistors (RADFETs) response to photon and electron beams has been carried out in reference conditions. Both types of beams, which are routinely used in clinical radiotherapy, have been applied to RADFETs of several gate oxide thicknesses, sizes and technological processes manufactured by Tyndall National Institute, Cork, Ireland. They show very similar responses in terms of sensitivity and linearity with dose ranges typical of clinical radiation treatments.