Low Frequency Noise Characterization and Signal-to-Noise Ratio Optimization for Silicon Hall Cross Sensors

In this paper, silicon-based Hall cross sensors with different device dimensions and carrier densities are designed and fabricated. Low frequency noise behavior regarding to the device dimension and carrier density of the Hall cross sensors has been successfully characterized. Based on the measured $1/f$ -dependent low frequency noise spectral density and the theoretically calculated geometrical factors using a finite-element analysis tool, the noise voltage is calculated and Hooge's constant is reliably extracted. The signal-to-noise ratio is thus calculated and experimentally verified. This paper provides a guidance for the optimal design of Hall cross sensors.