High voltage power Schottky diodes

Calculations of the low frequency rectification efficiency of power Schottky diodes show that silicon Schottky rectifiers have lower losses than silicon p-n junctions for all voltage applications up to approximately 150 volts. These calculations are presented. Large area (.6 cm²) Schottky diodes have been fabricated which exhibit near ideal reverse leakage at 100°C out to approximately 100 volts and which have current capability of 100 A. Fabrication details and performance data are presented.